12-Jan-2023 | Facts and Factors
According to Facts and Factors, the global insulated gate bipolar transistor (IGBT) market size was worth around USD 7.7 billion in 2021 and is predicted to grow to around USD 12.5 billion by 2030 with a compound annual growth rate (CAGR) of roughly 11.6% between 2022 and 2030.
It is a power semiconductor component that consists of three terminals. This product is utilized for fast switching and boosting efficiency. This component consists of four layers and is controlled with the help of a metal oxide semiconductor gate. The insulated gate bipolar transistors are utilized in electric vehicles, railways, welding machines, air conditioners, and induction hobs.
Browse the full “Insulated Gate Bipolar Transistor (IGBT) Market Size, Share, Growth Analysis Report By Application (Consumer Electronics, Automotive EV/HEV, Industrial Manufacturing, Railways, Inverters, Renewables, Others), by Voltage (Low Voltage - up to 600 V and 601 to 1200 V, Medium Voltage - 1700 V and 2500 V, High Voltage - 3300 V, 4500 V and above), and By Region - Global and Regional Industry Insights, Overview, Comprehensive Analysis, Trends, Statistical Research, Market Intelligence, Historical Data and Forecast 2022 – 2030" report at https://www.fnfresearch.com/insulated-gate-bipolar-transistor-igbt-market
Complex waveforms can be synthesized with the help of an insulated gate bipolar transistor as it is designed to turn on and off frequently. This component is also utilized in the switching amplifiers that are a part of the sound systems. Industrial control systems also make use of insulated gate bipolar transistors. A single device is made which consists of a bipolar transistor in the form of a switch that is utilized for controlling the input with the help of a combination of isolated gate FET.
The insulated gate bipolar transistor is utilized in high to medium-voltage applications such as controlling traction motors and induction heaters. Many devices are set up in parallel in large, insulated gate bipolar transistor modules that have the capability of handling high current voltage. It provides a blocking voltage of approximately 6500 V.
Increasing demand for insulated gate bipolar transistor applications for electric vehicles is expected to drive the global insulated gate bipolar transistor (IGBT) market during the forecast period. Because of the rapid climate change and increasing global warming, the demand for renewable sources of energy is increasing. The IGBT component helps to conserve a huge amount of energy which proves to be beneficial for the system.
Advancements have been observed because of the active participation of the government to organize the infrastructure that is required for increasing the production of electric vehicles. Smart grids have been installed to replace the old grids. The smart grids provide a better capacity for load adjustment. High voltages can be easily managed and controlled with the help of IGBT. Several benefits are obtained with the help of this minor carrier device like high input impedance and huge current-getting capacity.
In the event of wear out and overstress, the mechanism of the insulated gate bipolar transistor undergoes a failure. Various factors which include wear-out failures are bias temperature instability, time-dependent dielectric breakdown, solder fatigue, hot carrier injection, electromigration, corrosion, and material reconstruction.
The factors which lead to an overstress failure are latch-up, electrostatic discharge avalanche, burnout, wire-bond liftoff, and secondary breakdown. These factors will emerge as challenges and restraints during the forecast period.
Segmental Overview
The global insulated gate bipolar transistor (IGBT) market is segmented on the basis of application, voltage, and region.
By voltage, the market is divided into low voltage - up to 600 V and 601 to 1200 V, medium voltage - 1700 V and 2500 V, high voltage - 3300 V, 4500 V, and above. By voltage, the high voltage segment is expected to boost the growth of the market because of its increasing demand among consumers. A high current-getting capability is required in the industries for manufacturing. This is provided with the help of the high voltage insulated gate bipolar transistors.
The aviation industry along with the automotive makes use of this component for managing the manufacturing process. Steady growth is observed in the medium voltage segment because of the increasing demand from the manufacturers. The adoption of electric vehicles is expected to boost the market of the low-voltage segment in the long run.
By application, the market has been divided into consumer electronics, automotive EV/HEV, industrial manufacturing, railways, inverters, renewables, and others. The industrial manufacturing segment is expected to fuel the size of the market considerably because of the increasing demand for automation among manufacturing companies.
Increasing demand for automation among manufacturers is expected to boost the size of the market. The utilization of insulated gate bipolar transistors helps to prolong the life and increase the power output of the system. This component can survive harsh environmental conditions such as high temperature, humidity, mechanical vibration, and shock.
Regional Overview
By region, Asia-Pacific has emerged as the largest market for insulated gate bipolar transistors because of the huge number of manufacturers in this region. The heavy production of semiconductors and electrical components in this region has boosted the size of the market considerably. The adoption of energy-saving resources has helped the market to record significant revenue.
A considerable contribution has been made by India and Japan by increasing the consumption of energy-saving resources. Significant growth is expected from the region of North America because of the implementation of IGBT which helps to conserve a huge amount of energy. European nations are expected to contribute significantly to the growth of the market because of the inclusion of the IGBT system in the railway industry. European nations, being one of the highest producers of electric vehicles, are expected to contribute to the growth of the market during the forecast period.
Report Scope
Report Attribute |
Details |
Market Size in 2021 |
USD 7.7 Billion |
Projected Market Size in 2030 |
USD 11.6 Billion |
CAGR Growth Rate |
18% CAGR |
Base Year |
2021 |
Forecast Years |
2022-2030 |
Key Market Players |
Fujitsu Ltd., Infineon Technologies AG, STMicroelectronics N.V., NXP Semiconductors N.V., Vishay Intertechnology, Fairchild Semiconductor International Inc., Toshiba Corporation Inc., ROHM Co. Ltd., Fuji Electric Co. Ltd., Renesas Electronics Corporation, and others. |
Key Segment |
By Application, Voltage, and Region |
Major Regions Covered |
North America, Europe, Asia Pacific, Latin America, and the Middle East &, Africa |
Purchase Options |
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Competitive Landscape
The global insulated gate bipolar transistor (IGBT) market is led by players like Fujitsu Ltd., Infineon Technologies AG, STMicroelectronics N.V., NXP Semiconductors N.V., Vishay Intertechnology, Fairchild Semiconductor International, Inc., Toshiba Corporation, Inc., ROHM Co. Ltd., Fuji Electric Co. Ltd., and Renesas Electronics Corporation.
Recent developments
- In November 2020 - Infineon Technologies and Fronius International GmbH introduced a solar inverter by utilizing IGBT and related products. This step was taken to offer an all-in-one solution. It provides multiple solutions like a secure power supply, energy storage system, connection for an external system, and charging facility for electric vehicles.
- In May 2019 - The first slot of battery-operated vehicles that was launched by Audi was facilitated with Hitachi's EV inverter. An insulated gate bipolar transistor of the next generation was encapsulated along with the power module within the inverter. Output with high power density will be provided with the help of this combination which will boost the performance of the motor. This will help to encourage consumers for electric vehicles and boost the market for insulated gate bipolar transistors.
The global insulated gate bipolar transistor (IGBT) market is segmented as follows:
By Application
- Consumer electronics
- Automotive EV/HEV
- Industrial manufacturing
- Railways
- Inverters
- Renewables
- Others
By Voltage
- Low voltage -
- up to 600 V
- 601 to 1200 V
- Medium voltage
- High voltage
By Region
- North America
- Europe
- France
- The UK
- Spain
- Germany
- Italy
- Nordic Countries
- Benelux Union
- Belgium
- The Netherlands
- Luxembourg
- Rest of Europe
- Asia Pacific
- China
- Japan
- India
- Australia
- South Korea
- Southeast Asia
- Indonesia
- Thailand
- Malaysia
- Singapore
- Rest of Southeast Asia
- Rest of Asia Pacific
- The Middle East & Africa
- Saudi Arabia
- UAE
- Egypt
- South Africa
- Rest of the Middle East & Africa
- Latin America
- Brazil
- Argentina
- Rest of Latin America
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